000 00381nab a2200121Ia 4500
008 230808s2003 |||||||f |||| 00| 0 eng d
100 _aMa, T.P
_9779073
245 0 _aGate Dielectrics for Si, Sic, and Gan As Synthesized By Jet Vapor Deposition
300 _a36.-370 p.
650 _aGate Dielectric
_9806467
773 _d2003
_tMicroelectronics Journal
_x00262692
942 _cART
_o51
_pABUL KALAM Library
999 _c763316
_d763316