000			00487nab a2200145Ia 4500
008			230808s2003 |||||||f |||| 00| 0 eng d
100			_aEsseni, D _9800917
100			_aAbramol, E. _9810057
245		0	_aPhysically Based Modeling of Lowfield Electron Mobility in Ultrathin Single-and Double -Gate Soi N-Mosfets
300			_a2445-2453 p.
650			_aMobility _9164527
650			_aModeling _915553
773			_d2003 _tIeee Transactions on Electron Devices _x00189383
942			_cART _o51 _pABUL KALAM Library
999			_c762823 _d762823