000			00531nab a2200157Ia 4500
008			230808s2003 |||||||f |||| 00| 0 eng d
100			_aKuo, C H _9807722
100			_aTsai, J M _9807153
100			_aSu, Y K _9778066
245		0	_aNitride-Based Light Emitting Diodes with Si-Doped In0.23 Ga0.77 N/Gan Short Period Superlattice Tunneling Contact Layer
300			_a535-537 p.
650			_aHall Measurement _9807723
650			_aLed _9692847
773			_d2003 _tIeee Transactions on Electron Devices _x00189383
942			_cART _o51 _pABUL KALAM Library
999			_c760935 _d760935