| 000 | 00498nab a2200157Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s2003 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aLai, W C _9807151 |
||
| 100 |
_aTsai, J M _9807153 |
||
| 100 |
_aSheu, J K _9797534 |
||
| 245 | 0 | _aNitride-Based Green Light-Emitting Diodes with High Temperature Gan Barrier Layers | |
| 300 | _a1766-1770 p. | ||
| 650 |
_aReliability _953955 |
||
| 650 |
_aIngan-Gan _9807155 |
||
| 773 |
_d2003 _tIeee Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c760519 _d760519 |
||