| 000 | 00496nab a2200157Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s2004 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aJin, Z. _9806651 |
||
| 100 |
_aNeumann, S. _9806652 |
||
| 245 | 0 | _aSurface Recombination Mechanism in Graded-Base Ingaas-Inp Hbts | |
| 300 | _a1044`-1045 p. | ||
| 650 |
_aGraded Base _9785207 |
||
| 650 |
_aHeterostructure _9696447 |
||
| 650 |
_aBipolar Transistor _9702913 |
||
| 773 |
_d2004 _tIeee Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c760097 _d760097 |
||