000			00503nab a2200157Ia 4500
008			230808s2003 |||||||f |||| 00| 0 eng d
100			_aZhang, Shengong _9770921
100			_aHan, Ruqi _9806650
100			_aHuang, Ru _9779354
245		2	_aA Viable Self-Aligned Bottom-Gate Mos Transistor Technology for Deep Submicron 3-D Sram
300			_a1952-1960 p.
650			_aMosfet _9720139
650			_aSram _9714354
773			_d2003 _tIeee Transactions on Electron Devices _x00189383
942			_cART _o51 _pABUL KALAM Library
999			_c760096 _d760096