| 000 | 00536nab a2200157Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s2003 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aCheng, C F _9802968 |
||
| 100 | _aChan, Mansun | ||
| 100 |
_aKok, C W _9806535 |
||
| 245 | 0 | _aModeling of Grain Growth Mechanism By Nickel Silicide Reactive Grain Boundary Effect in Metal-Induced-Lateral-Crystallization | |
| 300 | _a1467-1474 p. | ||
| 650 | _aCrystallization | ||
| 650 |
_aPolysilicon _9768183 |
||
| 773 |
_d2003 _tIeee Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c760008 _d760008 |
||