| 000 | 00507nab a2200145Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s2004 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aKim, Junghwan _9754825 |
||
| 100 |
_aJohnson, William B. _9800750 |
||
| 245 | 0 | _aImprovement of Dark Current Using Inp/Gaasp Transition Layer in Layer-Area Ingaas Msm Photodetectors | |
| 300 | _a351-356 p. | ||
| 650 |
_aEpitaxial Layers _9774687 |
||
| 650 |
_aPhotodectector _9770905 |
||
| 773 |
_d2004 _tIeee Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c755977 _d755977 |
||