| 000 | 00474nab a2200121Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s2005 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aSaito, Waturu _9791606 |
||
| 245 | 0 | _aDesign Optimization of High Breakdown Voltage Aigan-Gan Power Hemt on An Insulating Substrate for Ron A-Vb Tradeoff Characteristics | |
| 300 | _a106-111 p. | ||
| 650 |
_aSolid-State Power and High Voltage _9797047 |
||
| 773 |
_d2005 _tIeee Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c753675 _d753675 |
||