| 000 | 00472nab a2200145Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s2007 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aQiao, M. _9789358 |
||
| 245 | 0 | _aAnalysis of Back-Gate Effect on Breakdown Behaviour of Over 600v Soi Ldmos Transistors | |
| 300 | _a1231-1232 p. | ||
| 650 |
_aSemiconductor Technology _9756520 |
||
| 650 |
_aAnalysis _9673343 |
||
| 650 |
_aBack-Gate _9789359 |
||
| 773 |
_d2007 _tIET:IEE: Electronics Letters _x00135194 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c749185 _d749185 |
||