000 | 00556nab a2200169Ia 4500 | ||
---|---|---|---|
008 | 230808s1998 |||||||f |||| 00| 0 eng d | ||
100 |
_aRicco, Bruno _9768878 |
||
100 |
_aGozzi, Gianfranco _9779948 |
||
100 |
_aLanzoni, Nassimo _9779950 |
||
245 | 0 | _aModeling and Simulation of Stress-Induced Leakage Current in Ultrathin Sio2 Films | |
300 | _a1554-1560 p. | ||
650 |
_aMos Capacitors _9777962 |
||
650 |
_aReliability _953955 |
||
650 |
_aThin Oxide _9771943 |
||
773 |
_d1998 _tIEEE Transactions on Electron Devices _x00189383 |
||
942 |
_cART _o51 _pABUL KALAM Library |
||
999 |
_c745005 _d745005 |