000 | 00598nab a2200169Ia 4500 | ||
---|---|---|---|
008 | 230808s1999 |||||||f |||| 00| 0 eng d | ||
100 |
_aShiue, Jao-Hsian _9776325 |
||
100 |
_aLee, Joseph Ya-Min _9779740 |
||
100 |
_aChao, Tien-Sheng _9779742 |
||
245 | 2 | _aA Study of Interface Trap Generation by Fowler-Nordheim and Substrate-Hot-Carrier Stresses Fo 4-Nm Thick Gate Oxides | |
300 | _a1705-1710 p. | ||
650 |
_aHot Carrier _9767189 |
||
650 |
_aInterface Traps _9779743 |
||
650 |
_aMos Device _9768494 |
||
773 |
_d1999 _tIEEE Transactions on Electron Devices _x00189383 |
||
942 |
_cART _o51 _pABUL KALAM Library |
||
999 |
_c744910 _d744910 |