| 000 | 00540nab a2200157Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s1998 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aHuang, Ru _9779354 |
||
| 100 |
_aZhang, Xing-Xiang _9779355 |
||
| 100 |
_aWang, Yangyuan _9777905 |
||
| 245 | 2 | _aA High Performance Soi Drive in Gate Controlied Hybrid Trasistor | |
| 300 | _a2079-2080 p. | ||
| 650 |
_aDevice Characterization _9777560 |
||
| 650 |
_aDrive in Gate Controlied Hybrid Transistor _9779357 |
||
| 773 |
_d1998 _tIEEE Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c744739 _d744739 |
||