| 000 | 00619nab a2200169Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s1998 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aNishihori, Kazuya _9778394 |
||
| 100 |
_aKitaura, Yoshiaki _9778396 |
||
| 100 |
_aUchitomi, Naotaka _9778398 |
||
| 245 | 2 | _aA Self-Aligned Gare Gaas Mesfet with P-Pocket Layers for High-Efficiejcy linear Power Amplifiers | |
| 300 | _a1385-1392 p. | ||
| 650 |
_aAdjacent Channel Leakage Power _9777011 |
||
| 650 |
_aBuried Layer Structure _9778399 |
||
| 650 |
_aShort-Channel Effects _9681641 |
||
| 773 |
_d1998 _tIEEE Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c744327 _d744327 |
||