000 00512nab a2200145Ia 4500
008 230808s1998 |||||||f |||| 00| 0 eng d
100 _aSatoh, Shinji
_9718800
100 _aRozansky, David A
_9778333
100 _aAritome, SeIIchi
_9778334
245 0 _aStress-Induced Leakage Current of Tunnel Oxide Derived from Flash Memory Read-Disturb Characteristics
300 _a482-486 p.
650 _aCharacteristic Speeds
_9753625
773 _d1998
_tIEEE Transactions on Electron Devices
_x00189383
942 _cART
_o51
_pABUL KALAM Library
999 _c744298
_d744298