| 000 | 00607nab a2200169Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s1999 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aYang, Nian _9777930 |
||
| 100 |
_aHenson, W. Kirklen _9770953 |
||
| 100 |
_aWortman, Jimmie J. _9777933 |
||
| 245 | 0 | _aModeling Study of Ultrathin Gate Oxides Using Direct Tunneling Current and Capacitance Voltage Measurements in Mos Devices | |
| 300 | _a1464-1471 p. | ||
| 650 |
_aCapacitance _9707591 |
||
| 650 |
_aDielectric Films _9496077 |
||
| 650 |
_aInversion Layers _9768455 |
||
| 773 |
_d1999 _tIEEE Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c744137 _d744137 |
||