| 000 | 00583nab a2200169Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s1999 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aYang, Tien-Chun _9768497 |
||
| 100 |
_aSachdev, Pinkesh _9777926 |
||
| 100 |
_aSARaswat, Krishna C. _9768498 |
||
| 245 | 0 | _aDependence of Fermi Level Positions at Gate and Substrate onReliability of Ultrathin Mos Gate Oxides | |
| 300 | _a1457-1463 p. | ||
| 650 |
_aBarrier Height _9777927 |
||
| 650 |
_aUltrathin Sections _9777928 |
||
| 650 |
_aOxide _983600 |
||
| 773 |
_d1999 _tIEEE Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c744135 _d744135 |
||