000 | 00538nab a2200157Ia 4500 | ||
---|---|---|---|
008 | 230808s1999 |||||||f |||| 00| 0 eng d | ||
100 |
_aChen, Hsin-li _9776141 |
||
100 |
_aWu, Chen-Yang _9747370 |
||
245 | 2 | _aA New I-V Model ConsideringImpact-Ionization Effect Initiated byDigbl Current for Intrinsic N-Channel Poly-Si Tft'S | |
300 | _a722-728 p. | ||
650 |
_aDigbl _9776144 |
||
650 |
_aImpact-Ionization _9771576 |
||
650 |
_aModel _9173318 |
||
773 |
_d1999 _tIEEE Transactions on Electron Devices _x00189383 |
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942 |
_cART _o51 _pABUL KALAM Library |
||
999 |
_c743453 _d743453 |