| 000 | 00538nab a2200157Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s1999 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aChen, Hsin-li _9776141 |
||
| 100 |
_aWu, Chen-Yang _9747370 |
||
| 245 | 2 | _aA New I-V Model ConsideringImpact-Ionization Effect Initiated byDigbl Current for Intrinsic N-Channel Poly-Si Tft'S | |
| 300 | _a722-728 p. | ||
| 650 |
_aDigbl _9776144 |
||
| 650 |
_aImpact-Ionization _9771576 |
||
| 650 |
_aModel _9173318 |
||
| 773 |
_d1999 _tIEEE Transactions on Electron Devices _x00189383 |
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| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c743453 _d743453 |
||