| 000 | 00546nab a2200169Ia 4500 | ||
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| 008 | 230808s2000 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aling, Chi-Hai _9771937 |
||
| 100 |
_aAng, C H _9771939 |
||
| 100 |
_aAng, D. S. _9771940 |
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| 245 | 0 | _aCharacterization of Leakage Current in Thin Gate Oxide Subjected to 10 Kev X-Ray Irradiation | |
| 300 | _a650-652 p. | ||
| 650 |
_aLeakage Currents _9757109 |
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| 650 |
_aMos _9758952 |
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| 650 |
_aThin Oxide _9771943 |
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| 773 |
_d2000 _tIEEE Transactions on Electron Devices _x00189383 |
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| 942 |
_cART _o51 _pABUL KALAM Library |
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| 999 |
_c741688 _d741688 |
||