000 | 00626nab a2200169Ia 4500 | ||
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008 | 230808s2000 |||||||f |||| 00| 0 eng d | ||
100 |
_alin, Shih-Chieh _9768478 |
||
100 |
_aKuo, James B. _977748 |
||
100 |
_aSun, Shih-Wei _9768479 |
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245 | 2 | _aA Closed- Form Back-Gate-Bias Related Inverse Narrow-Channel Effect Model for Deep-Submicron Vlsi Cmos Devices Using Shaliow Trench Isolation | |
300 | _a725-733 p. | ||
650 |
_aSti _9714005 |
||
650 |
_aCon Formal Mapping _9768481 |
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650 |
_aInverse Narrowchannel Effect _9768483 |
||
773 |
_d2000 _tIEEE Transactions on Electron Devices _x00189383 |
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942 |
_cART _o51 _pABUL KALAM Library |
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999 |
_c740363 _d740363 |