000 | 00634nab a2200157Ia 4500 | ||
---|---|---|---|
008 | 230808s2014 |||||||f |||| 00| 0 eng d | ||
100 |
_aPabdian, M. Karthigai _9708226 |
||
100 | _aBalamurugan, N. B. | ||
245 | 0 | _aAnalytical Threshold Voltage Modeling of Surrounding Gate Ksilicon Nanowire Transistors with Didfferent Geometries | |
300 | _a2079-2088 p. | ||
650 |
_aJunction Based Cylindrical Surrounding Gate Silicon Nanowire Transistor _9708227 |
||
650 |
_aDrain Bias _9708228 |
||
650 |
_aChannel Length Modulation _9708229 |
||
773 |
_d2014 _tJournal of Electrical Engineering and Technology _x19750102 |
||
942 |
_cART _o51 _pABUL KALAM Library |
||
999 |
_c712475 _d712475 |