| 000 | 00681nam a2200205Ia 4500 | ||
|---|---|---|---|
| 008 | 000930s1988||||xx |||||||||||||| ||eng|| | ||
| 020 | _a007065381X | ||
| 022 | _l0-07-065381-X | ||
| 041 | _aeng | ||
| 082 |
_a621.381528 _bTSI |
||
| 100 |
_aTsividis, Yannis P. _eAU |
||
| 245 | 0 | _aOperation and Modeling of the Mos Transistor | |
| 260 |
_aSingapore : _bMcGraw-Hill, _cc1988 |
||
| 300 |
_aXX, 505 p. _b: ill |
||
| 440 | _aMcGraw-Hill Series in Electrical Engineering | ||
| 504 | _aNN | ||
| 650 | _aMetal Oxide Semiconductors Mathematical Models | ||
| 856 |
_yTable of Contents _uhttps://eaklibrary.neduet.edu.pk:8443/catalog/bk/books/toc/0-07-065381-X.pdf |
||
| 942 | _cBOO | ||
| 999 |
_c381509 _d381509 |
||