Results of search for 'su:"Silicon Devices"' › Engr Abul Kalam Library catalog

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		Synthesis and Characterization of (3,4-Diphenyl-2,5-Diethyl)Phenyl-Polyvinyl Silicon Oils by liu, Zonglin Zhao, Yong Zheng, Ying Source: Journal of Applied Polymer Science Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analysis OfSpurious Negative Resistance of Pn Junction Avalanche Breakdown by Hong, Sung Joon Park, Young June Min, H Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Over-Erase Phenomenon in Sonos-Type Flash Memory and Its Minimisation Using A Hafnium Oxide Charge Storage Layer by Tan, Y N Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		onBallistic Transport in Nanometer-Scaled Dg Mosfets by Martin, J Saint Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Optimization of Alloy Composition for High-Performance Strained-Si-Sige N-Channel Mosfets by Olsen, Sarah H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Role ofMercury-Si-Schottky-Barrier Height in Pseudo-Mosfets by Shoi, J Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Two-Dimensional Analytical Threshold Voltage Model for Dmg Epi-Mosfet by Goel, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Modeling Mechanical Stress Effect on Dopant Diffusion in Scaled Mosfets by Sheu, Y M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Threshold Voltage Control in Nisi-Gated Mosfets Through Siis by Kedzierski, Jakub Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Simulated Operation and Properties of Source-Gated Thin-Film Transistors by Lindner, T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Nanoscale Finfets with Gate-Source-Drain Underlap by Trivedi, V P Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Impacts of Nonrectangular Fin Cross Section onElectrical Characteristics of Finfet by Wu, X Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Impact Ionization Mos (I-Mos) Part I: Device and Circuit Simulations by Gopalakrishnan, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Threshold Voltage Model for Mesa-Isolated Small Geometry Fully Depleted Soi Mosfets Based on Analytical Solution of 3-Dpoisson'S Equation by Katti, G Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Structural Optimization of Sutbdg Devices for Low-Power Applications by Xiong, Shiying Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		(110)-Surface Strained-Soi Cmos Devices by Mizuno, T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Direct Parameter Extraction of Sige Hbts for Vbic Bipolar Compact Model by Lee, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Analytical Programming Model for Drain-Coupling Source-Side Injection Split Gate Flash Eeprom by Wang, H. Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Simulation of Single-Electron Transport in Nanostructured Quantum Dots by Babiker, S Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Asymmetric Halo Cmosfet to Reduce Static Power Dissipation with Improved Performance by Bansal, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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