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		A Physicaliy Based Compact Model of Partialiy Depleted Soi Mosfets for Analog Circuit Simulation by Lee, Mike S. L Tenbroek, Bernard M Redman-White, Wililam Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Industrial Application of Heterostructure Device Simulation by Palankovski, Vassil Quay, Rudiger Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Tpta; Resostance Slope-Based Effective Channel Mobility Extraction Method for Deep Submicrometer Cmos Technology by Niu, Guofu Cressler, John D Mathew, Suraj J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Modeling of Smali-Signal Minority-Carrier Transport in Bipolar Devices at Arbitrary Injection Levels by Rinaldi, Niccolo F Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Compact Model for Multiterminal Bipolar Devices Used in Smart Power Applications by Speciale, Nicolo Leone, Alberto Privitera, Giuseppe Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Soi Mosfet with Buried Body Strap by Wafer Bonding by Kuehne, Stephen C Chan, Alice Y. W Nguyen, Cuong T Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Effects of Transver5se Dopiong Variations onTransient Response of Silicon Avalanche Shaper Devvices by Jalali, B Joshi, R. R Gaudet, John A Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analysis and Modeling of Smali-Signal Bipolar Transistor Operation at Arbitrary Injection Levels by Rinaldi, N. F Graaff, H. C. De Fujino, Y Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Monte Carlo Simulation and Measurement of Nanoscale N-Mosfets by Bufler, F.M Asahi, Yoshinori Fichtner, Wolfgang Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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