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Characterization of Interface Degradation in Deep Submicronmosfets By Gate Controlled -Diode Measurement by
  • Huang, J.-T
  • Chen, T.P
  • Tse, M.S
Source: Microelectronics Journal
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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A Camparison of Wave-Function Penetration Effect on Gate Capacitance in Deep Submicron N- and P-Mosfets by
  • Haque, M.N
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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