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Fermi-Level Pinning AtPolysikicon/Metal Oxide Interface-Part I by
  • Hobbs, Christopher C
  • Fonseca, L. G. S
  • Knizhnik, Adrey
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Electrical Characterization and Material Evaluation of Zirconium Oxynitride Gate Dielectric in Tan Gated Nmosfets with High Temperature for ming Gas Annealing by
  • Nieh, Renee E
  • Lee, Jack C
  • Han, Jeong Hee
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Gate Dielectrics for Si, Sic, and Gan As Synthesized By Jet Vapor Deposition by
  • Ma, T.P
Source: Microelectronics Journal
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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