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		Characterization of Leakage Current in Thin Gate Oxide Subjected to 10 Kev X-Ray Irradiation by ling, Chi-Hai Ang, C H Ang, D. S Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Comprehensive Study of Hot Carier Stress-Induced Drain Leakage Current Degradation in Thin-Oxide N-Mosfet'S by Wang, Tahui Chiang, Lu-Ping Zous, Nian-Kai Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Modeling and Simulation of Stress-Induced Leakage Current in Ultrathin Sio2 Films by Ricco, Bruno Gozzi, Gianfranco Lanzoni, Nassimo Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Gate Oxide Thickness Dependence of Edge Charge Trapping in Nmos Transistors Caused By Charge Injection Under Constant-Current Stress by Chen, T P Tse, M S Ang, C H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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