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A 2d Analytical Modeling of Single Halo Triple Material Surrounding Gate (Shtmsg) Mosfet by
  • Dhanaselvam, P. Suveetha
  • Lee, Moon-Qee
  • Ramesh, R. P
Source: Journal of Electrical Engineering and Technology
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Two-Dimensional Doping Profile Characterization of Mosfet'S by Inverse Modeling Using Characteristics InSubthreshold Region by
  • Lee, Zachary K
  • Mclirath, Michael B
  • Antoniadis, Dimitri A
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Optmization and Realization of Sub-100-Nm Channel Length Single Halo P-Mosfets by
  • Borse, D G
  • K.N, M. Rani
  • Jha, N.K
  • Chandorkar, A. N
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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