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		Impact of Structural Parameters on Performance of Recessed Channel Sol-Mosfet by Mishra, Sikha Bhanja, Urmila Mishra, G. P Source: International Journal of Nanoparticles Material type: Article; Format: print Availability: Not available: Engr Abul Kalam Library: Available on Request (1). Request article
		Gate Length Scalability of N-Mosfet'S Down to 30 Nm Comparison Between Ldd and Non-Ldd Structures by Murakami, EIIchi Yoshimura, Tohiyuki Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Self-Aligned Gare Gaas Mesfet with P-Pocket Layers for High-Efficiejcy linear Power Amplifiers by Nishihori, Kazuya Kitaura, Yoshiaki Uchitomi, Naotaka Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Dual-Material Gate (Dmg) Field Effect Transistor by Long, Wei Ou, H Kuo, Jen-Min Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytical 2d Modeling for Potential Distribution and Threshold Voltage ofShort Channel Fully Depleted Cylindrical Surrounding Gate Mosfet by Aouaj, Abdellah Bouziane, Ahmed Nouacry, Ahmed Source: International Journal of Electronics Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Short-Channel Single-Gate Soi Mosfet Model by Suzuki, Kunihiro Pidin, Sergey Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Compact Threshold-Voltage Model for Short-Channel Partially Depleted (Pd) Soi Dynamic-Threshold Mos (Dtmos) Devices by Kuo, J. B Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Steep Retrograde Indium Channnel Profiling for High Performance Nmosfets Devices Fabricatrion by Oog, S..Y Chor, E.F Leung, Y.K Lee, James Source: Microelectronics Journal Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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