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Material and Device Issues of Aigan/Gan Hemts on Silicon Substrates by
  • Javorka, P
  • Alam, A
Source: Microelectronics Journal
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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A Future of Function Or Failure ? by
  • Alam, A
  • Weir, B
  • Silverman, P
Source: Ieee Circuits and Devices Magazine
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Ai Gan / Gan Hemts on Silicon Substrates with Ft of 32 / 20 Ghz and F Max of 27 / 22 Ghz for 0.5 / 0.7 Um Gate Length by
  • Javorka, P
  • Alam, A
  • Fox, A
  • Marso, M
Source: IET:IEE: Electronics Letters
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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