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		Shoc Rfectifier: A New Metal-Semiconductor Device with Excellent for ward and Reverse Characteristics by Kumar, M.J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Simple, High Performance Tfsoi Complementary Bicmos Technology for Low Power Wireless Applications by Kumar, M.J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Low-Loss Lateral Trench Sidewall Schottky (Ltss) Rectifier on Soi with High and Sharp Breakdown Voltage by Kumar, M.J Singh, Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Device Characteristics of3-D Bicmos Technology Using Selective Epitaxial Growth and Lateral Solid Phase Epitaxy by Kumar, M.J Liu, H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Lateral Pnm Schottky Collector Bipolar (Scbt) on Soi for Non Saturating Vlsi Logic Design by Kumar, M.J Rao, D. V Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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