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		Investigation on Electron and Hole Transport Properties UsingFuli-Band Spherical Harmonics Expansion Method by Reggiani, S Vecchi, Cristina Rudan, Massimo Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Compact Double-Gate Mosfet Model Comprising Quantum-Mecanical and Nonstatic Effects by Baccarani, G Reggiani, S Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Electron and Hole Mobility in Silicon At Large Operating Temperatures Part-I: Bulk Mobility by Reggiani, S Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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