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Effect of Physical Stress onDegradation of Thin Sio2 Films Under Electrical Stress by
  • Yang, Tien-Chun
  • SARaswat, Krishna C
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Dependence of Fermi Level Positions at Gate and Substrate onReliability of Ultrathin Mos Gate Oxides by
  • Yang, Tien-Chun
  • Sachdev, Pinkesh
  • SARaswat, Krishna C
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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