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		A Compact Quantum Model for Cylindrical Surrounding Gate Mosfet Ts Using High-K Dielectries by Vimala, P Balamurugan, N.B Source: Journal of Electrical Engineering and Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytical Surcace Potential Model with Tcad Simulation Verification for Evaluation of Surrounding Gate Tfet by Samuel, T. S. Arun Balamurugan, N. B Samyuktha, B Source: Journal of Electrical Engineering and Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Analytical Modeling and Simulation of Dual Material Double Gate Tunnel Field Effect Trasistor for Low Power Applications by Samuel, T. S. Arun Balamurugan, N. B Source: Journal of Electrical Engineering and Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytical Threshold Voltage Modeling of Surrounding Gate Ksilicon Nanowire Transistors with Didfferent Geometries by Pabdian, M. Karthigai Balamurugan, N. B Source: Journal of Electrical Engineering and Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analysis of Tunnelilng Rate Effect on Single Electron Transistor by L, Sheela Balamurugan, N.B Source: Journal of Electrical Engineering and Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors by Samuel, T. S. Arun Balamurugan, N. B Source: Journal of Electrical Engineering and Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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