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A Switched-Current Sensing Architecture for A Four State Per Cell Magnetic Tunnel Junction Mram by
  • K.S., Edward
  • Ki., Wing-Hung
Source: Ieee Transactions on Circuits and Systems, I: Fundamental Theory and Applications
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Design and Development ofMagnetorheological Abrasive Flow Fishing (Mraff) Process by
  • Jha, Sunil
  • Jian, V.K
Source: International Journal of Machine tools & Manufacture: Design, Research and Application
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Magnetic Tunnel Junctions with Doubly-Plasma Oxidized Al0x Insulation Layer by
  • Lee, Y. M
Source: Microelectronics Journal
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
The Science and Technology of Magnetoresistive Tunneling Memory by
  • Engel, B N
  • Rizzo, N D
Source: Ieee Transactions on Nanotechnology
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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