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		Low-Frequency Noise Behavior of Sio2-Hfo2 Dual -Layer Gate Dielectric in Mosfets with Different Interfacial Oxide Thickness by Simoen, Eddy Mercha, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Novel Monos-Typenonvolatile Memory Using High- Dielectric for Improved Data Retention and Programming Speed by Xuguang, Wang Liu, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Theoretical and Experimental Investigation of Si Nanocrystal Memory Device with Hfo2 High-K Tunneling Dielectric by Lee, Jong Jin Wang, Xuguang Lu, Nan Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Diffusion Coefficient of B in Hfo2 by Sugita, Yoshihiro Tashiro, Hiroko Suzuki, Kunihiro Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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