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Partially Deplected Soi Mosfets Under Unaxial Tensile Strain by
  • Zhao, Wei
  • He, Jianli
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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A Physically Based Analytical Model for Threshold Voltage of Strained -Si N-Mosfets by
  • Nayfeh, Hasan M
  • Hoyt, J. W
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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