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		Gaas-Misfets with Insuling Gate Films for med By Direct Oxidatio N and By Oxinitridation of Recesses Gaas Surfaces by Takebe, Masahide Nakamura, Kazuki Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Effect of Annealing Temperatures on Self-Ailned Replacement (Damascene) Tacn-Tan-Stacked Gate Pmosfets by Pan, J Woo, Christy Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Thermally Robust Hfn Metal As A Promising Gate Electrode for Advanced Mos Device Applications by Yu Yu, Hong Li, Ming-Fu Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Self-Aligned Nickel Cobalt Tantalum Nitride Stacked -Gate Pmosfets Fabricated with Low Temperature Process after Metal Electrode Deposition by Woo, James Pan Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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