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		Reverse Current Instabilities in Amorphous Silicon Schottky Diodes Modeling and Experiments by Aflatooni, Koorosh Hornsey, Richard Nathan, Arokia Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Investigation ofNovel Attributes of A Fully Depleted Dual-Material Gate Soi Mosfet by Chaudry, Anurag Kumar, Jagadesh Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Physics-Based Analytical Modeling of Potential and Electrical Field Distribution in Dual Material Gate (Dmg)-Mosfet by Saxena, Nirmal R Haldar, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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