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Characteristics OfBase Coupled Insulated Gate Thyristor Experiment and Analytical Modeling by
  • Ajit, J. S
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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A Compact Velocity-Overshoot Model for Deep-Submicron Bipolar Devices Considering Energy Transport by
  • Wu, Hung-Chih
  • Kuo, James B
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Thermal Instability of Low Voltage Power Mosfet'S. by
  • Consoli, A
  • Gennaro, F
Source: Ieee Transactions on PowerElectronics
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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