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		Interface Properties of No-Annealed N2o-Grown Oxynitride by Lai, P. T Xu, J.P Cheng, Y.C Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Ultrathin Al203 and Hfo2 Gate Dielectrics on Surface - Nitrided Ge by Chen, Jiunn-Tsair Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Fermi-Level Pinning AtPolysilicon/Metal -Oxide Interface - Part Ii by Hobbs, Christopher C Fonseca, Leonardo R.C Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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