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		Field and Temperature Acceleration Model for Time-Dependent Dielectric Breakdown by Kimura, Mikihiro Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Making Silicon Nitride Film a Viable Gate Dielectric by Ma, T.P Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Modeling and Simulation of Stress-Induced Leakage Current in Ultrathin Sio2 Films by Ricco, Bruno Gozzi, Gianfranco Lanzoni, Nassimo Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Generation Lifetime Improvement on Mos Capacitor By Fast Neutron Enhanced Intrinsic Gettering Technique by Uen, Wu-Yih Source: Microelectronics Journal Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Effect of Annealing on Gan-Insulator Interfaces Characterized By Metal-Insulator-Semiconductor Capacitors by Matocha, Kevin Gutmann, Ronald J Chow, T Paul Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High-Al2o3 Gate Dielectrics Prepared By Oxidation of Aluminium Film in Nitric Acid Followed By High-Temperature Annealing by Kuo, Chih-Sheng Hsu, Jui-Feng Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Suppression of Stress-Induced Leakage Current after Fowler-Nordheim Stressing By Deuterium Pyrogenic Oxidation and Deuterated Poly-Si Deposition by Mitani, Y Satake, H Itoh, H toriumi, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Mos Varactor Modeling with A Subcircuit UtilizingBsim3v3 Model by Molnar, K Seebacher, E Huszka, Z Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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