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Dependence of Fermi Level Positions at Gate and Substrate onReliability of Ultrathin Mos Gate Oxides by
  • Yang, Tien-Chun
  • Sachdev, Pinkesh
  • SARaswat, Krishna C
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Barrier Height Engineering on Gaas Thz Schottky Diodes by Means of High-Low Doping Ingaas Adn Ingap-Layers by
  • Sassen, Stefan
  • Witzigmann, Bernd
  • Wolk, Claus
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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