Your search returned 9 results.

Results
		A New Soft Breakdown Model for Thin Thermal Sio2 Films Under Constant Current Stress by Tomita, T Sakurai, T Taniguchi, Kenji Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Rapid Thermal Anneal of Gate Oxides for Low Thermal Budget Tft'S by Bhat, Navakanta Wang, Albert W SARaswat, Krishna C Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Relation Phenomena of Positive Charges Inthin Gate Oxide During Fowler-Nordheim Tunneling Stress by Chang, Kow-Ming li, ChII-Horng Yeh, T L Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Correlation Between Two Time-Dependent Dielectric Breakdown Measurements for Gate Oxides Damaged by Plama Processing by Eriguchi, Koji Kosaka, Yukiko Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Fga Effects on Plasma-Induced Damage : BeyondApperances by Cellere, Giorgio Paccagnella, Alessandro Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Lsser Thermal Processing of Amphous Silicon Gates to Reduce Poly-Depletion in Cmos Devices by Chong, Yung Fu Gossmann, Hans-Joachim Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Suppression of Stress-Induced Leakage Current after Fowler-Nordheim Stressing By Deuterium Pyrogenic Oxidation and Deuterated Poly-Si Deposition by Mitani, Y Satake, H Itoh, H toriumi, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Micro Breakdown in Small-Area Ultrathin Gate Oxide by Cellere, Giorgio Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Characterization of Defect Traps in Sio2 Thin Films Influence of Temperature on Defects by Eosaye, Jean-Yves Kurumado, Norihiko Sakashita, Mitsukuni Ikeda, Hiroaki Source: Microelectronics Journal Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

Report a problem