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		Observation Of"Capactiance Overshoot" InTransient Currednt Measurement of Polysilicon Tft'S by Tam, S. W. B Lui, O. K. B Quinn, M. J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Physicaliy-Based Continuous Model for Accumulation-Mode Soi Pmosfet'S by Iniguez, B DesSARd, V Flandre, D Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Rf Measyrement Technique for Characterizing Thin Dielectric Films by Ma, Zhengxiang Becker, andrew J Polakos, P Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Measured Capacitance Coefficients of Multiconductor Microstrip lines with Smali Dimensions by lin, Mou-Shiung Source: IEEE Transactions on Components Hybrids and Manufacturing Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Test Structure Measureing Inter- and Intralayer Coupling Capacitance of Interconnection with Subfemtofarad by Kunikiyo, Tatsuya Watanabe, T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Test Structure Measuring Inter- and Interlayer Coupling Capacitance of Interconnection with Subfemtofarad Resolution by Kunikiyo, Tatsuya Watanabe, Tetsuya Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Extraction ofCapacitance of Ultrathin High-K Gate Dielectrics by Kar, Samares Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analysis ofEffect of Stray Capacitance on An Ac-Based Capacitance tomography Transducer by Yang, W.Q Source: Ieee Transactions on Instrumentation and Measurement Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Accurate Interface for Capacitive Sensors by Li, Xiujun Source: Ieee Transactions on Instrumentation and Measurement Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Fast Interface Characterization of Tunnel Oxide Mos Structures by Sell, Bernhard Source: Ieee Transactions on Nanotechnology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Frequency Dependence in Interline Capacitance Measurements by Stucchi, M Maex, K Source: Ieee Transactions on Instrumentation and Measurement Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Limitations of A Relaxation in Capacitance Measurements. by Nakayama, M Liu, Y Chen, S Source: Ieee Transactions on Instrumentation and Measurement Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Performance and Potentialities ofa Very Simple Self-Compensated Pressure Sensor Demonstrator. by Blasquez, G Menini, P Source: Ieee Transactions on Instrumentation and Measurement Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High-Accuracy Circuits for on-Chip Capacitive Ratio Testing and Sensor Readout. by Sun, T Kajita, T Source: Ieee Transactions on Instrumentation and Measurement Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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