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		Interfacial Gate Resistance in Schottky- Arrier-Gate Field-Effect Transistors by Rohdin, Hans Moli, Nick Lee, Gregory S Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Study of Trapping Phenomenon in 4h Sic Mesfets Dependence on Substrate Purity by Morvan, Erwan Sghaier, Nabil Souifi, Abdelkader Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Comparison of Zincblende-Phase Gan, Cubic-Phase Sic, and Gaas Mesfets Using A Full-Band Mond Monte Carlo Simulator by Weber, Michael T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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