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		Tunnel Magnetoresistance Devices Processed by Oxidation in Air and Uv Assisted Oxidation in Oxygen by Girgis, Emad Gruenberg, P Kohistedt, H Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A 4-Mb 0.18-Um 1t1mtj toggle Mram with Balanced Three Input Sensing Scheme and Locally Mirrored Unidirectional Write Drivers by andre, Thomas Nahas, Joseph J Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A High-Speed 128-Kb Mram Core for Future Universal Memory Applications by Gogl, Dietmar Muller, Gerhard Arndt, Christian Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A 0.24-Um 2.0-V 1t1mtj 16-Kb Nonvolatile Magnetoresistance Ram with Self-Reference Sensing Scheme by Jeong, Gitae Cho, Wooyoung Kim, Kinam Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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