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Analysis of Hot Carrier Transport in Algaas/Ingaas Pseudomorphic Hemt'S bymeans of Electroluminescence by
  • Meneghesso, Gaudenzio
  • Pavesi, Maura
  • Zanoni, Enrico
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A New I-V Model ConsideringImpact-Ionization Effect Initiated byDigbl Current for Intrinsic N-Channel Poly-Si Tft'S by
  • Chen, Hsin-li
  • Wu, Chen-Yang
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Simple Model for Avalanche Multiplication Including Deadspace Effects by
  • Plimmer, S. A
  • David, J P R
  • li, K
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Dynamic Avalanche in 3. 3-Kv Si Power Diodes by
  • Domeij, Martin
  • linnros, Jan
  • Ostling, Mikael
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Modified Lucky Electron Model for Impact Ionization Rate in Nmosfet'S at 77 K by
  • ling, C. H
  • See, lin Ming
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Impact Ionization Suppression by Quantum Confinement Effects onDc and Microwave Performance of Narrow-Gap Channel Inas/Alsb Hfet'S by
  • Bolognesi, C. R
  • Dvorak, Martin W
  • Chow, David H
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A New Look at Impact Ionization Part II Gain and Noise in Short Avalanchephotodiodes by
  • Yuan, P
  • Hu, C
  • Anselm, K.A
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Impact-Ionization-Assisted Intermediate Band Solar Cell by
  • Luque, Antonio
  • Cuadra, Lucas
  • Marti, Antonio
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Impact Ionization Measurements and Modeling for Power Phemt by
  • Baksht, Tamara
  • Solodky, Sanelia
  • Shapira, Yoram
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Nondestructive Current Localization Upon High-Current Nanosecond Switching of An Avalanche Transistor by
  • Vainshtein, Sergey
  • Yuferev, Valentin
  • Kostamovaara, Juha
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Nonlocal Effects in Thin 4h-Sic Uv Avalanche Photodiodes by
  • Ng, B K
  • David, P R
  • Rees, Graham J
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Channel Width Dependence of Nmosfet Hot Carrier Degradation by
  • Li, Erhong
  • Prasad, Sharad
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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