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Very Slow Charge Trapping and Release in Ion Implanted Gaas by
  • Chiu, Chi-Hsin
  • Boroumand, Farhad A
  • Swanson, J. Garth
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Measurement of Mosfet Substrate Dopant Profile Via Inversion Layer-To-Substrate Capacitance by
  • Hsu, C. H
  • Chiang, Charles Yu-Teh
  • Yeow, Yew Tong
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Analysis of Bias Stress on Unpassivated Hydrogenated Amorphous Silicon Thin-Film Transistors by
  • Slade, Holiy Claudia
  • Shur, Michael S
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Quantum Effects onExtraction of Mos Oxide Traps by 1/F Noise Measurements by
  • Pacelil, A
  • Vilia, Stefano
  • Lacaita, andrea L
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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