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Conduction Mechanisms in Barium Tantalates Films and Modification of Interfacial Barrier Height by
  • Lee, Yun-Hi
  • Kim, Dong-Ho
  • Ju, bycong-Kwon
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
New Addressing Method Using Overlapping Scan Time of Ac-Pdp by
  • Kim, S. G
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Effects of Pre-Reset Conditions on Reset Discharge from Ramp Reset Wave for ms in Ac Plasma Display Panel by
  • Shin, B J
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Effects ofParasitics onTime Response of Rce-Pds by
  • El-Batawy, Y M
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Analysis and Circuit Modeling of Waveguide-Separated Absorption Charge Multiplication-Avalanche Photodetector (Wg-Sacm-Apd) by
  • El-Batawy, Y M
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Binary Addressing Technique with Duty Cycle Control for Lcds by
  • Ruckmongathan, T N
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Sea of Polymer Pillars Electrical and Optical Chip I/O Interconnections for Gigascale Integration by
  • Bakir, M.S
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Contribution of Dislocations toZero-Bias Resistance-Area Product of Lwir Hgcdte Photodiodes At Low Temperatures by
  • Gopal, V
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Integration of Optical Polymer Pillars Chip I/O Interconnections with Si Msm Photodetectors by
  • Bakir, M.S
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Characterization ofSwitching Parameters InDual-Channel Double Heterostructure Optoelectronic Switch by
  • Opper, H
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Study of Low-Bias Photocurrent Gradient of Avalanche Photodiodes by
  • Wang, S
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Boundary Effects on Multiplication Noise in Thin Heterostructure Avalanche Photodiodes: Theory and Experiment by
  • Hayat, M M
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Design of An Organic Pixel Addressing Circuit for An Active-Matrix Olded Display by
  • Aerts, W. F
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Design of An Opto-Electronic Modulator Driver Amplifier for 40-Gb/S Data Rate System by
  • Long, A
Source: Journal of Lightwave Technology
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
High-Resolution Microencapsulated Electrophoretic Display (Epd) Driven By Poly-Si Tfts with Four-Level Grayscale by
  • Inoue, S
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Dopant Emission Mechanism andEffects of Host Materials onBehavior of Doped Organic Light-Emitting Diodes by
  • Chen, H
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Rare-Earth-Doped Gan Switchable Color Electroluminescent Devices by
  • Heikenfeld, J
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Temperature Behavior of Visible and Infrared Electroluminescent Devices Fabricated on Erbium-Doped Gan by
  • Steckley, A. C
  • Garter, M. J
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Electroluminescent Devices Using A High-Temperature Stable Gan-Based Phosphor and Thick-Film Dielectric Layer by
  • Heikenfeld, J
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Effect of Dead Space on Avalanche Speed by
  • Ng, J S
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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